Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics

Author

Sato, M. ; Umezawa, N. ; Mise, N. ; Kamiyama, S. ; Kadoshima, M. ; Morooka, T. ; Adachi, T. ; Chikyow, T. ; Yamabe, K. ; Shiraishi, K. ; Miyazaki, S. ; Uedono, A. ; Yamada, K. ; Aoyama, T. ; Eimori, T. ; Nara, Y. ; Ohji, Y.

Author_Institution

Semicond. Leading Edge Technol., Inc. (Selete), Tsukuba

fYear

2008

fDate

17-19 June 2008

Firstpage

66

Lastpage

67

Abstract

We clarified the impact of the fifth material incorporation into HfSiON technology for V_th control on the reliability of high-k/metal gate stacks CMOSFETs. HfMgSiON is remarkably effective for suppressing electron traps, giving rise to a dramatic PBTI lifetime improvement for nMOSFETs. With pMOSFETs, Al incorporation is effective for the thermal deactivation of hole traps, resulting in NBTI lifetime improvement. We have established the guidelines of material selection to be incorporated into HfSiON for reliability improvement for nMOS and pMOS individually.

Keywords

CMOS integrated circuits; MOSFET; electron traps; hafnium compounds; high-k dielectric thin films; hole traps; magnesium compounds; semiconductor device reliability; silicon compounds; HfMgSiON; HfSiON; HfSiON gate dielectrics; NBTI lifetime improvement; PBTI lifetime improvement; dual high-k CMOSFET; electron traps suppression; fifth element incorporation; hole traps; nMOSFETs; pMOSFETs; reliability improvement; thermal deactivation; CMOS technology; CMOSFETs; Electron traps; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFETs; Materials reliability; Niobium compounds; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2008 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1802-2

Electronic_ISBN

978-1-4244-1803-9

Type

conf

DOI

10.1109/VLSIT.2008.4588566

Filename

4588566