Title :
Densely packed high power VCSEL arrays
Author :
Grabherr, M. ; Miller, M. ; Jager, R. ; Rosch, R. ; Martin, U. ; Unold, H. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
We report on bottom emitting oxide confined InGaAs MQW VCSEL arrays with high packing densities emitting at 980 nm wavelength. CW output powers of 560 mW at room temperature resulting in 330 W/cm/sup 2/ spatially averaged optical power density are achieved using appropriate heat sinking.
Keywords :
III-V semiconductors; gallium arsenide; heat sinks; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor device packaging; surface emitting lasers; 560 mW; 980 nm; CW output powers; InGaAs; appropriate heat sinking; bottom emitting oxide confined InGaAs MQW VCSEL arrays; densely packed high power VCSEL arrays; high packing densities; room temperature; spatially averaged optical power density; Aging; Biomedical optical imaging; Heat sinks; Optical arrays; Power generation; Temperature dependence; Thermal resistance; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734226
