A solution to characteristics of planar transmission lines made of finite-thickness metal on multi-layer media

Author

Liou, J.C. ; Lau, K.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

179

Abstract

When analyzing signal transmission characteristics of metal lines on semiconductor devices and circuits, the assumption that metal is perfectly conducting is not always valid. A simple, accurate way to include metallic loss in spectral-domain analysis of planar transmission lines built on multilayer semiconducting media is presented. Applications to analyzing IC interconnection delays, calculating FET gate electrode losses, and optimizing monolithic slow-wave devices are described.<>

Keywords

metallisation; transmission line theory; FET gate electrode losses; IC interconnection delays; finite-thickness metal; metal lines on semiconductor; metallic loss; monolithic slow-wave devices; multi-layer media; multilayer semiconducting media; planar transmission lines; semiconductor wafers; signal transmission characteristics; spectral-domain analysis; Application specific integrated circuits; FET integrated circuits; Integrated circuit interconnections; Monolithic integrated circuits; Nonhomogeneous media; Planar transmission lines; Propagation losses; Semiconductivity; Semiconductor devices; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99551

Filename

99551