Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors

Author

McDermott, M.G. ; Sweeney, C. ; Benedek, M. ; Dawe, G.

Author_Institution

GAMMA Monolithics, Woburn, MA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

185

Abstract

High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semi-insulating GaAs substrate for millimeter-wave MMIC (monolithic microwave integrated circuit) applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. A monolithic Ka-band VCO using these devices has been built and tested. Output powers of 60 mW with 70 MHz of tuning bandwidth and 40 mW with 120 MHz of tuning bandwidth have been measured at 32 GHz.<>

Keywords

III-V semiconductors; MMIC; Q-factor; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; microwave oscillators; tuning; varactors; variable-frequency oscillators; 0.25 micron; 35 to 32 GHz; 6 dB; 60 mW; EHF; GaAs; Ka-band; MESFETs; MIMIC; abrupt varactor diodes; gain; high-Q varactors; millimeter-wave MMIC; monolithic VCO; monolithic microwave integrated circuit; output power; semiconductors; series resistance; tuning bandwidth; Bandwidth; Diodes; Electrical resistance measurement; Gallium arsenide; Integrated circuit measurements; MESFETs; MMICs; Millimeter wave integrated circuits; Millimeter wave measurements; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99552

Filename

99552