Title :
Ku- and K-band GaAs MMIC varactor-tuned FET oscillators using MeV ion-implanted buried-layer back contacts
Author :
McNally, P.J. ; Smith, T. ; Phelleps, F.R. ; Hogan, K.M. ; Smith, B. ; Deitrich, H.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
An all ion-implantation planar process has been used to fabricate high-Q, hyperabrupt carrier profile, varactor diodes as components of GaAs MMIC VCOs (monolithic microwave integrated circuit voltage-controlled oscillators) with state-of-the-art performance. These GaAs varactor-tuned FET oscillators operate up to 24 GHz with a tuning bandwidth of 5 GHz in K-band. The high-Q varactors feature a buried n/sup +/ layer created by ion-implantation at up to 6 MeV. Separately masked implanted n/sup +/ areas connect the buried layer to ohmic contacts at the surface. A varactor f/sub c/ of 1600 GHz was obtained at 0.09 pF.<>
Keywords :
III-V semiconductors; MMIC; Q-factor; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; microwave oscillators; tuning; varactors; variable-frequency oscillators; 0.09 pF; 24 GHz; 6 MeV; GaAs; K-band; Ku-band; MMIC VCOs; MeV ion-implanted buried-layer back contacts; all ion-implantation planar process; buried n/sup +/ layer; high-Q varactors; hyperabrupt carrier profile; hyperabrupt varactor diodes; monolithic microwave integrated circuit; ohmic contacts; semiconductors; tuning bandwidth; varactor-tuned FET oscillators; voltage-controlled oscillators; Diodes; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99553
