Q-switched and mode-locked QW diode lasers with implanted multisectional saturable absorber

Author

Gubenko, A. ; Portnoi, E. ; Venus, G. ; Il´inskaia, N. ; Gadjiev, I. ; Frahm, J.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

253

Lastpage

254

Abstract

A process of implantation of high energy heavy ions into the emitter layer of a semiconductor laser has been developed to create distributed ultrafast saturable absorber regions integrated within the cavity of a QW laser. A picosecond Q-switched laser diode delivering increased average power has been fabricated and multiple colliding pulse modelocked regime has been demonstrated with QW diode lasers having an implanted multisectional saturable absorber.

Keywords

Q-switching; high-speed optical techniques; ion implantation; laser mode locking; optical saturable absorption; quantum well lasers; Q-switched and mode-locked QW diode lasers; QW diode lasers; QW laser cavity; distributed ultrafast saturable absorber regions; emitter layer; high energy heavy ions; implanted multisectional saturable absorber; increased average power; multiple colliding pulse modelocked regime; picosecond Q-switched laser diode; semiconductor laser; Absorption; Diode lasers; Laser mode locking; Optical design; Optical pulses; Optical pumping; Particle beam optics; Pump lasers; Resists; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734230

Filename

734230