Title :
An X-band monolithic double-balanced mixer for high dynamic receiver application
Author :
Ton, T.N. ; Dow, G.S. ; Chen, T.H. ; Lacon, M. ; Lin, Tingyi S. ; Bui, S. ; Yang, Dong
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
An X-band monolithic double double-balanced mixer utilizing a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20-dBm and 1-dB compression output power of 3.6 dBm at 20-dBm LO drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. It is believed that this represents the highest IP/sub 3/ performance among reported monolithic mixers.<>
Keywords :
MMIC; Schottky gate field effect transistors; Schottky-barrier diodes; field effect integrated circuits; mixers (circuits); radio receivers; 10 dB; 5 GHz; 7 to 10 GHz; IF output frequency; MESFET process; MMIC mixer; RF performance; X-band; conversion loss; high dynamic receiver application; monolithic double-balanced mixer; monolithic mixer; triple balanced mixers; Analytical models; Bandwidth; Impedance matching; Loss measurement; MESFETs; Mixers; Power generation; Radio frequency; Schottky barriers; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99555
