DocumentCode :
2413949
Title :
Using IS modeling to understand the effect of growth conditions and film attributes on AC conduction in CVD diamond
Author :
Bataineh, Mohannad M. ; Khatami, Saeid ; Reinhard, D.K. ; Asmussen, Jes, Jr.
Author_Institution :
Univ. of West Florida, Pensacola, FL, USA
fYear :
2002
fDate :
2002
Firstpage :
33
Lastpage :
41
Abstract :
The correlation between the electrical properties, especially conductivity, and film attributes of a wide selection of polycrystalline CVD diamond is investigated using the impedance spectroscopy (IS) modeling technique. Four key film properties, namely (1) the Raman diamond to graphite ratio (Id/Ig), (2) the full-width-at-half-maximum (FWHM) of the diamond Raman signal, (3) the crystalline morphology as quantified by the growth parameter, a, and (4) the average grain size have been considered and related to the films´ conductivities. The electrical properties are also correlated to two deposition parameters, namely substrate temperature and gas flow rate. The effect of test temperature on as-grown and annealed films´ electrical behavior is also considered
Keywords :
CVD coatings; Raman spectra; chemical vapour deposition; diamond; electric impedance; electrical conductivity; elemental semiconductors; grain size; semiconductor growth; AC conduction; C; CVD diamond; Raman spectra; average grain size; conductivity; electrical properties correlation; film attributes; growth conditions; impedance spectroscopy modeling; polycrystalline diamond; Conductive films; Conductivity; Crystallization; Electrochemical impedance spectroscopy; Fluid flow; Grain size; Morphology; Substrates; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoutheastCon, 2002. Proceedings IEEE
Conference_Location :
Columbia, SC
Print_ISBN :
0-7803-7252-2
Type :
conf
DOI :
10.1109/.2002.995553
Filename :
995553
Link To Document :
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