• DocumentCode
    2413965
  • Title

    A unified physical model of switching behavior in oxide-based RRAM

  • Author

    Xu, N. ; Gao, B. ; Liu, L.F. ; Sun, Bing ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F. ; Yu, B.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    Excellent bipolar resistive switching (RS) behavior was achieved in TiN/ZnO/Pt resistive random access memory (RRAM) devices. A unified physical model based on electrons hopping transport among oxygen vacancies along the conductive filaments (CFs) is proposed to elucidate the RS behavior in the RRAM devices. In the unified physical model, a new reset mechanism due to the depletion of electrons in oxygen vacancies and the recovery of electron-depleted oxygen vacancies (VO +) with non-lattice oxygen ions (O2-) is proposed and identified.
  • Keywords
    electron transport theory; random-access storage; titanium compounds; zinc compounds; TiN-ZnO-Pt; bipolar resistive switching; conductive filaments; electron depletion; electrons hopping transport; resistive random access memory; unified physical model; Electric variables measurement; Electrical resistance measurement; Electrodes; Electrons; Failure analysis; Pulse measurements; Stress; Tin; Voltage; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588578
  • Filename
    4588578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2413965