Title :
A unified physical model of switching behavior in oxide-based RRAM
Author :
Xu, N. ; Gao, B. ; Liu, L.F. ; Sun, Bing ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F. ; Yu, B.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
Excellent bipolar resistive switching (RS) behavior was achieved in TiN/ZnO/Pt resistive random access memory (RRAM) devices. A unified physical model based on electrons hopping transport among oxygen vacancies along the conductive filaments (CFs) is proposed to elucidate the RS behavior in the RRAM devices. In the unified physical model, a new reset mechanism due to the depletion of electrons in oxygen vacancies and the recovery of electron-depleted oxygen vacancies (VO +) with non-lattice oxygen ions (O2-) is proposed and identified.
Keywords :
electron transport theory; random-access storage; titanium compounds; zinc compounds; TiN-ZnO-Pt; bipolar resistive switching; conductive filaments; electron depletion; electrons hopping transport; resistive random access memory; unified physical model; Electric variables measurement; Electrical resistance measurement; Electrodes; Electrons; Failure analysis; Pulse measurements; Stress; Tin; Voltage; Zinc oxide;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588578
