Title :
A proposal of new concept milli-second annealing: Flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for fabrication of ultra shallow junction with improvement of metal gate high-k CMOS performance
Author :
Onizawa, Takashi ; Kato, Shinich ; Aoyama, Takayuki ; Nara, Yasuo ; Ohji, Yuzuru
Author_Institution :
Semicond. Leading Edge Technol., Tsukuba
Abstract :
We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility (mueff) and bias temperature instability (BTI) characteristics. A recovery annealing (RA) treatment after FLA is most effective to recover those degradations. However, the annealing after dopant activation causes deactivation and diffusion. The FSP-FLA allowed us sub-10-milli-second annealing after activation FLA; it realizes high BTI reliability and high mueff without deactivation and diffusion.
Keywords :
CMOS integrated circuits; electron mobility; incoherent light annealing; semiconductor device manufacture; semiconductor device reliability; semiconductor doping; semiconductor junctions; BTI reliability; bias temperature instability; deactivation; dopant activation; electron mobility; flexibly-shaped-pulse flash lamp annealing; metal gate high-k CMOS; millisecond annealing; recovery annealing treatment; ultra shallow junction fabrication; Annealing; Channel bank filters; Degradation; Fabrication; High K dielectric materials; High-K gate dielectrics; Lamps; MOS devices; Proposals; Temperature;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588582
