DocumentCode :
2414067
Title :
Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond
Author :
Hokazono, A. ; Itokawa, H. ; Kusunoki, N. ; Mizushima, I. ; Inaba, S. ; Kawanaka, S. ; Toyoshima, Y.
Author_Institution :
Center for Semicond. Res.&Dev., Toshiba Corp., Yokohama
fYear :
2008
fDate :
17-19 June 2008
Firstpage :
112
Lastpage :
113
Abstract :
Si:C layers under non-doped-Si epitaxial channel (Epi-channel) produces steep channel profile for 25 nm-LG nMOSFET. Si:C layers work as the dopant-diffusion-barriers from the boron doped regions. Moreover, retrograde Halo profiles are also realized in this structure. Steep channel profiles at scaled device are confirmed, and the benefits of its profile at LG of 25 nm are discussed.
Keywords :
MOSFET; boron; carbon; diffusion barriers; elemental semiconductors; semiconductor doping; silicon; B; Halo profiles; Si:C; boron-diffusion-barrier layers; dopant-diffusion-barriers; epitaxial channel; size 32 nm; steep channel; Boron; CMOS technology; Capacitance-voltage characteristics; Degradation; Design optimization; Doping; Epitaxial growth; MOSFET circuits; Tensile stress; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
Type :
conf
DOI :
10.1109/VLSIT.2008.4588583
Filename :
4588583
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2414067
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