Title :
A Wide Range Spatial Frequency Analysis of Intra-Die Variations with 4-mm 4000 Ã\x97 1 Transistor Arrays in 90nm CMOS
Author :
Levacq, David ; Minakawa, Takuya ; Takamiya, Makoto ; Sakurai, Takayasu
Author_Institution :
Tokyo Univ., Tokyo
Abstract :
In order to investigate the systematic intra-die variations, the intra-die threshold voltage and on-current variations are measured thanks to 4-mm 4000times1 transistor arrays with 1 mum transistor-pitch in a 90 nm CMOS technology, achieving the widest spatial distribution range. The spatial frequency analysis of the variations indicates that both variations are random across 4 mm. The dependence of both variations on body bias is also measured and the relationships between threshold voltage variations and on-current variations are analyzed by using the alpha-power law model.
Keywords :
CMOS integrated circuits; integrated circuit modelling; transistor circuits; CMOS; alpha power law model; intra die threshold voltage; intra die variations; on current variations; size 4 mm; size 90 nm; transistor arrays; wide range spatial frequency analysis; CMOS technology; Circuits; Collaboration; Frequency measurement; MOSFETs; Q measurement; Semiconductor device measurement; Subthreshold current; Threshold voltage; Very large scale integration;
Conference_Titel :
Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-1623-3
Electronic_ISBN :
978-1-4244-1623-3
DOI :
10.1109/CICC.2007.4405727
