A Wide Range Spatial Frequency Analysis of Intra-Die Variations with 4-mm 4000 Ã\x97 1 Transistor Arrays in 90nm CMOS

Author

Levacq, David ; Minakawa, Takuya ; Takamiya, Makoto ; Sakurai, Takayasu

Author_Institution

Tokyo Univ., Tokyo

fYear

2007

fDate

16-19 Sept. 2007

Firstpage

257

Lastpage

260

Abstract

In order to investigate the systematic intra-die variations, the intra-die threshold voltage and on-current variations are measured thanks to 4-mm 4000times1 transistor arrays with 1 mum transistor-pitch in a 90 nm CMOS technology, achieving the widest spatial distribution range. The spatial frequency analysis of the variations indicates that both variations are random across 4 mm. The dependence of both variations on body bias is also measured and the relationships between threshold voltage variations and on-current variations are analyzed by using the alpha-power law model.

Keywords

CMOS integrated circuits; integrated circuit modelling; transistor circuits; CMOS; alpha power law model; intra die threshold voltage; intra die variations; on current variations; size 4 mm; size 90 nm; transistor arrays; wide range spatial frequency analysis; CMOS technology; Circuits; Collaboration; Frequency measurement; MOSFETs; Q measurement; Semiconductor device measurement; Subthreshold current; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2007. CICC '07. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-1623-3

Electronic_ISBN

978-1-4244-1623-3

Type

conf

DOI

10.1109/CICC.2007.4405727

Filename

4405727