Gate-all-around single silicon nanowire MOSFET with 7 nm width for SONOS NAND flash memory

Author

Yeo, Kyoung Hwan ; Cho, Keun Hwi ; Li, Ming ; Suk, Sung Dae ; Yeoh, Yun-young ; Kim, Min-Sang ; Bae, Hyunjun ; Lee, Ji-Myoung ; Sung, Suk-Kang ; Seo, Jun ; Park, Bokkyoung ; Kim, Dong-Won ; Park, Donggun ; Lee, Won-Seoung

Author_Institution

ATDT1, R&D Center, Yongin

fYear

2008

fDate

17-19 June 2008

Firstpage

138

Lastpage

139

Abstract

Gate-all-around (GAA) MOSFET with single silicon nanowire is fabricated and applied to SONOS memory as a cell transistor for NAND flash string. Driving current over 1 uA, which is sufficient to NAND string, is obtained with single nanowire of ~7 nm width. Using FN tunneling conditions, V_TH window of 4.5 V and fast program/erase (P/E) speed of ~10 us are obtained, respectively. The smaller nanowire width is, the faster program speed and the larger V_TH shift are achieved. P/E operations in NAND string with GAA SONOS nanowire are demonstrated for the first time.

Keywords

MOSFET; NAND circuits; elemental semiconductors; flash memories; nanowires; silicon; SONOS NAND flash memory; gate-all-around MOSFET; gate-all-around single silicon nanowire MOSFET; nanowire channels; size 7 nm; Electric variables; Fabrication; MOSFET circuits; Nanoscale devices; Research and development; SONOS devices; Silicon compounds; Temperature measurement; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2008 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1802-2

Electronic_ISBN

978-1-4244-1803-9

Type

conf

DOI

10.1109/VLSIT.2008.4588593

Filename

4588593