Title :
Cost-effective Ni-melt-FUSI boosting 32-nm node LSTP transistors
Author :
Fukutome, H. ; Kawamura, K. ; Ohta, H. ; Hosaka, K. ; Sakoda, T. ; Morisaki, Y. ; Momiyama, Y.
Author_Institution :
Fujitsu Labs. Ltd., akiruno
Abstract :
We demonstrated for the first time that novel Ni-FUSI process using FLA (Melt-FUSI) dramatically improved both electrical characteristics and cost-benefit performance of LSTP devices. Since the Tinv was aggressively scaled (Tinv = 2.1 nm) with keeping SiON-gate leakage current and increasing hole mobility twice, we achieved the record Ion of 300 muA/mum at the Ioff of 20 pA/mum for the pMOS transistor with the Lg of 45 nm at Vd of -1.2 V.
Keywords :
MOSFET; hole mobility; incoherent light annealing; leakage currents; low-power electronics; silicon compounds; FLA; LSTP devices; LSTP transistors; Ni-FUSI process; Ni-melt-FUSI boosting; SiON-gate leakage current; electrical characteristics; hole mobility; pMOS transistor; Annealing; Boosting; Capacitance; Degradation; Electric variables; Laboratories; Leakage current; MOSFETs; Temperature; Threshold voltage;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588598