Title :
Design and demonstration of very high-k (k∼50) HfO2 for ultra-scaled Si CMOS
Author :
Migita, S. ; Watanabe, Y. ; Ota, H. ; Ito, H. ; Kamimuta, Y. ; Nabatame, T. ; Toriumi, A.
Author_Institution :
MIRAI-AIST, Tsukuba
Abstract :
We have demonstrated very high-k (k~50) HfO2 films for ultra-scaled CMOS application. Higher symmetric crystalline structure enables us to achieve higher-k HfO2. We present a feasible method to obtain sub-nm EOT with very high-k HfO2 under actual process conditions, together with an underlying mechanism.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit design; silicon; CMOS; EOT; HfO2; crystalline structure; temperature 50 K; Annealing; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Phase change materials; Photonic band gap; Substrates; Temperature;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588599
