Title :
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
Author :
Hamaguchi, M. ; Yin, H. ; Saenger, K.L. ; Sung, C.Y. ; Hasumi, R. ; Iijima, R. ; Ohuchi, K. ; Takasu, Y. ; Ott, J.A. ; Kang, H. ; Biscardi, M. ; Li, J. ; Domenicucci, A.G. ; Zhu, Z. ; Ronsheim, P. ; Zhang, R. ; Rovedo, N. ; Utomo, H. ; Fogel, K. ; de Souz
Author_Institution :
Syst. & Technol. Group, IBM Semicond. R&D Center, Hopewell Junction, NY
Abstract :
Twisted direct silicon bonded (DSB) substrate demonstrates a higher hole mobility advantage over (110) bulk substrate for PFET. The mobility shows a (110) layer thickness dependence with the thinner DSB layer having a higher hole mobility. 25% on-current improvement is obtained for thin DSB PFETs at long channel (Lg= 2 mum), 10% higher at short channel (Lg = 36 nm) compared to (110) bulk PFETs. Moreover, we found that the thinner DSB shows better Vt roll-off characteristics. On the other hand, NFETs on DSB are as good as (100) bulk NFETs. Thin DSB substrate demonstrates 11% faster ring oscillator speed over thick DSB substrate and 30% faster over (100) bulk due to higher mobility and lower capacitance.
Keywords :
capacitance; elemental semiconductors; field effect transistors; hole mobility; silicon; wafer bonding; NFET; PFET; Si; bulk substrate; capacitance; direct silicon bonded substrate; hole mobility; twisted direct silicon bonding; Boron; CMOS technology; Capacitance; Capacitive sensors; Morphology; Ring oscillators; Silicon; Strain measurement; Substrates; Wafer bonding;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588609
