DocumentCode :
24147
Title :
Highly sensitive seesaw capacitive pressure sensor based on SOI wafer
Author :
Yang, C.C. ; Zhao, Qiming ; Gao, C.C. ; Liu, G.D. ; Zhang, Y.X. ; Cui, W.P. ; Hao, Y.L.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Volume :
50
Issue :
5
fYear :
2014
fDate :
Feb. 27 2014
Firstpage :
376
Lastpage :
377
Abstract :
A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor´s sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa.
Keywords :
capacitive sensors; deformation; diaphragms; elemental semiconductors; microsensors; pressure sensors; silicon; silicon-on-insulator; MEMS; Si; diaphragm; highly sensitive seesaw capacitive pressure sensor; mechanical deformation; microelectromechanical system; silicon on insulator wafer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.4170
Filename :
6759700
Link To Document :
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