DocumentCode
24147
Title
Highly sensitive seesaw capacitive pressure sensor based on SOI wafer
Author
Yang, C.C. ; Zhao, Qiming ; Gao, C.C. ; Liu, G.D. ; Zhang, Y.X. ; Cui, W.P. ; Hao, Y.L.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
50
Issue
5
fYear
2014
fDate
Feb. 27 2014
Firstpage
376
Lastpage
377
Abstract
A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor´s sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa.
Keywords
capacitive sensors; deformation; diaphragms; elemental semiconductors; microsensors; pressure sensors; silicon; silicon-on-insulator; MEMS; Si; diaphragm; highly sensitive seesaw capacitive pressure sensor; mechanical deformation; microelectromechanical system; silicon on insulator wafer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.4170
Filename
6759700
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