• DocumentCode
    2414777
  • Title

    Low Vt gate-first Al/TaN/[Ir3Si-HfSi2−x]/HfLaON CMOS using simple laser annealing/reflection

  • Author

    Liao, C.C. ; Chin, Albert ; Su, N.C. ; Li, M.-F. ; Wang, S.J.

  • Author_Institution
    Dept of E. E., Nat´´l Chiao-Tung Univ., Hsinchu
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    190
  • Lastpage
    191
  • Abstract
    We report low Vt Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection with self-aligned and gate-first process compatible with current VLSI. At 1.05 nm EOT, good phim-eff of 5.04 and 4.24 eV, low Vt of -0.16 and 0.13 V, high mobility of 85 and 209 cm2/Vs, and small 85degC BTI les40 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.
  • Keywords
    CMOS integrated circuits; VLSI; aluminium; hafnium compounds; laser beam annealing; tantalum compounds; CMOS; EOT; VLSI; laser annealing; laser reflection; n-MOS; p-MOS; Annealing; Bonding; CMOS process; Channel bank filters; Hafnium oxide; Laser noise; Microelectronics; Optical reflection; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588614
  • Filename
    4588614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2414777