DocumentCode :
2414777
Title :
Low Vt gate-first Al/TaN/[Ir3Si-HfSi2−x]/HfLaON CMOS using simple laser annealing/reflection
Author :
Liao, C.C. ; Chin, Albert ; Su, N.C. ; Li, M.-F. ; Wang, S.J.
Author_Institution :
Dept of E. E., Nat´´l Chiao-Tung Univ., Hsinchu
fYear :
2008
fDate :
17-19 June 2008
Firstpage :
190
Lastpage :
191
Abstract :
We report low Vt Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection with self-aligned and gate-first process compatible with current VLSI. At 1.05 nm EOT, good phim-eff of 5.04 and 4.24 eV, low Vt of -0.16 and 0.13 V, high mobility of 85 and 209 cm2/Vs, and small 85degC BTI les40 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.
Keywords :
CMOS integrated circuits; VLSI; aluminium; hafnium compounds; laser beam annealing; tantalum compounds; CMOS; EOT; VLSI; laser annealing; laser reflection; n-MOS; p-MOS; Annealing; Bonding; CMOS process; Channel bank filters; Hafnium oxide; Laser noise; Microelectronics; Optical reflection; Temperature; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
Type :
conf
DOI :
10.1109/VLSIT.2008.4588614
Filename :
4588614
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2414777
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