• DocumentCode
    2414785
  • Title

    Evolution of CMOS Technology at 32 nm and Beyond

  • Author

    Shahidi, Ghavam G.

  • Author_Institution
    IBM, Yorktown Heights
  • fYear
    2007
  • fDate
    16-19 Sept. 2007
  • Firstpage
    413
  • Lastpage
    416
  • Abstract
    Over the last 15 years, there has been a new CMOS technology node approximately every two years. The key feature of every node has been 2X density shrink and ~35% performance gain per technology node. Chip power has been increasing rapidly, approaching air cool limit. Power limit is transforming CMOS scaling to more of a density driver. As we move to 32 nm node and beyond a number of additional fundamental challenges are faced, which may force additional rethinking of how scaling has been done. This paper is an overview of some upcoming challenges and possible ways of addressing them.
  • Keywords
    CMOS integrated circuits; CMOS scaling; CMOS technology; chip power; density driver; density shrink; performance gain; size 32 nm; BiCMOS integrated circuits; CMOS technology; Copper; MOSFETs; Metals industry; Performance gain; Power generation; Random access memory; Silicon on insulator technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-1623-3
  • Electronic_ISBN
    978-1-4244-1623-3
  • Type

    conf

  • DOI
    10.1109/CICC.2007.4405764
  • Filename
    4405764