DocumentCode
2414785
Title
Evolution of CMOS Technology at 32 nm and Beyond
Author
Shahidi, Ghavam G.
Author_Institution
IBM, Yorktown Heights
fYear
2007
fDate
16-19 Sept. 2007
Firstpage
413
Lastpage
416
Abstract
Over the last 15 years, there has been a new CMOS technology node approximately every two years. The key feature of every node has been 2X density shrink and ~35% performance gain per technology node. Chip power has been increasing rapidly, approaching air cool limit. Power limit is transforming CMOS scaling to more of a density driver. As we move to 32 nm node and beyond a number of additional fundamental challenges are faced, which may force additional rethinking of how scaling has been done. This paper is an overview of some upcoming challenges and possible ways of addressing them.
Keywords
CMOS integrated circuits; CMOS scaling; CMOS technology; chip power; density driver; density shrink; performance gain; size 32 nm; BiCMOS integrated circuits; CMOS technology; Copper; MOSFETs; Metals industry; Performance gain; Power generation; Random access memory; Silicon on insulator technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-1623-3
Electronic_ISBN
978-1-4244-1623-3
Type
conf
DOI
10.1109/CICC.2007.4405764
Filename
4405764
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