DocumentCode
2414816
Title
New global shutter CMOS imager with 2 transistors per pixel
Author
Funaki, Masaki ; Shimizu, Takeshi ; Orihara, Syuji ; Kawanaka, Hiroyuki ; Kurihara, Makoto ; Sato, Hidetoshi ; Katsumata, Noboru ; Oikawa, Munetoshi ; Higuchi, Jun ; Oe, Kensei ; Kuga, Raijiro ; Maki, Kuniko ; Nishibata, Toshihiko
Author_Institution
Micro-Technol. Center, Victor Co. of Japan Ltd. (JVC), Yokohama
fYear
2008
fDate
17-19 June 2008
Firstpage
196
Lastpage
197
Abstract
We present a new global shutter CMOS imager with 2 transistors per pixel. The first transistor is a ring gate transistor for accumulating holes that modulate threshold voltage. The second one is a transfer gate transistor that transfers holes from a PD to the ring gate transistor at the same time in all pixels. Simple structure allows us to realize 5.4 um pixel pitch, kTC noise free, and global shutter sensor using 0.35 um technology.
Keywords
CMOS image sensors; transistors; CMOS imager; global shutter sensor; ring gate transistor; size 0.35 mum; threshold voltage; transfer gate transistor; CMOS image sensors; CMOS technology; Diodes; Manufacturing; Noise shaping; Partial discharges; Pixel; Roentgenium; Threshold voltage; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2008 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-1802-2
Electronic_ISBN
978-1-4244-1803-9
Type
conf
DOI
10.1109/VLSIT.2008.4588616
Filename
4588616
Link To Document