Title :
Integrated wafer-scale growth and transfer of directional Carbon Nanotubes and misaligned-Carbon-Nanotube-immune logic structures
Author :
Patil, Nishant ; Lin, Albert ; Myers, Edward R. ; Wong, H. S Philip ; Mitra, Subhasish
Author_Institution :
Stanford Univ., Stanford, CA
Abstract :
We successfully demonstrate essential components and their integration for large-scale carbon nanotube field effect transistor (CNFET) technology: 1. First demonstration of full-wafer-scale growth of directional carbon nanotubes (CNTs) on 4" single-crystal quartz wafers. 2. First demonstration of full-wafer-scale CNT transfer from 4" quartz wafers to 4" silicon wafers for integration on silicon. 3. Integration of full-wafer-scale growth and transfer, together with metallic-CNT removal, for the first demonstration of misaligned-CNT-immune digital logic structures on a full-wafer-scale. Such logic structures guarantee correct logic functionality in the presence of a large number of misaligned and mis-positioned CNTs.
Keywords :
carbon nanotubes; field effect logic circuits; field effect transistors; nanotube devices; wafer-scale integration; directional carbon nanotubes transfer; integrated wafer-scale growth; large-scale carbon nanotube field effect transistor technology; misaligned-CNT-immune digital logic structures; misaligned-carbon-nanotube-immune logic structures; single-crystal quartz wafers; CMOS logic circuits; CNTFETs; Carbon nanotubes; Etching; Fabrication; Large scale integration; Logic functions; Ring oscillators; Silicon; Very large scale integration;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588619
