Title : 
Switching waveforms of the L2 FET: A 5-volt gate-drive power MOSFET
         
        
            Author : 
Wheatley, C. Frank, Jr. ; Ronan, Harold R., Jr.
         
        
            Author_Institution : 
RCA Solid State Division, Mountaintop, Pa
         
        
        
        
        
        
            Abstract : 
Switching waveforms of a newly announced series of power-MOSFET devices called Logic-Level-FETs (L2 FETs) and featuring a 5-volt gate drive are presented and contrasted to the more conventional 10-volt-gate-drive devices. A new method of characterizing MOSFET switching performance is discussed in which the MOSFET is treated as a vertical JFET driven in cascade from a low-voltage lateral MOS. The 2:1 advantage in rise and fall-time and the 4:1 reduction in switching "dynamic V(sat)" dissipation with constant drive power of the 2 L FET over the 10-volt MOSFET are demonstrated and discussed.
         
        
            Keywords : 
Capacitance; Capacitors; JFETs; Logic gates; MOSFET; Standards; Switches;
         
        
        
        
            Conference_Titel : 
Power Electronics Specialists Conference, 1984 IEEE
         
        
            Conference_Location : 
Gaithersburg, MD, USA
         
        
        
        
            DOI : 
10.1109/PESC.1984.7083485