• DocumentCode
    241510
  • Title

    Effect of TiN capping layer on barrier inhomogeneities for TiSix/Si Schottky diode

  • Author

    Wu Peng ; Lin-Lin Wang ; Yu-Long Jiang

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The effect of TiN capping layer on barrier inhomogeneities for TiSix/n-Si Schottky diode is studied by temperature dependent current-voltage (I-V-T) measurements in this paper. The I-V-T curves from 90K to 310K show that the homogeneity of TiSix/n-Si Schottky diode can be obviously influenced by TiN capping layer. A double Gaussian model is employed to characterize the Schottky barrier distribution inhomogenities. It is revealed that the TiN capping layer can degrade the Schottky barrier distribution homogeneity and lower the apparent barrier height of the whole diode.
  • Keywords
    Gaussian processes; Schottky barriers; Schottky diodes; silicon; titanium compounds; Gaussian model; I-V-T curve; Schottky barrier distribution inhomogeneity; Schottky diode; TiN; TiSix-Si; capping layer; temperature 90 K to 310 K; temperature dependent current-voltage measurement; Abstracts; Nonhomogeneous media;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021176
  • Filename
    7021176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241510