DocumentCode :
2415138
Title :
An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs
Author :
Parvais, B. ; Hu, S. ; Dehan, M. ; Mercha, A. ; Decoutere, S.
Author_Institution :
IMEC, Leuven
fYear :
2007
fDate :
16-19 Sept. 2007
Firstpage :
503
Lastpage :
506
Abstract :
A new scalable compact model for the resistive substrate network of multi-finger MOSFETs is presented. The model is based on the transmission line formalism to capture the distributed nature of the well resistance. Due to its physical foundation, the model provides a more accurate description of different layout styles over a wide range of geometries. The model is validated experimentally on a 90 nm CMOS technology and is used to determine the geometry of RF transistors that minimize the substrate resistance. The opted network topology allows a direct implementation with the PSP model.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit modelling; network topology; radiofrequency integrated circuits; CMOS technology; PSP model; RF MOSFET; RF transistors; multifinger MOSFET; network topology; resistive substrate network; scalable compact model; size 90 nm; substrate resistance; CMOS technology; Geometry; Immune system; Integrated circuit modeling; MOSFETs; Radio frequency; Resistors; Semiconductor device modeling; Solid modeling; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-1623-3
Electronic_ISBN :
978-1-4244-1623-3
Type :
conf
DOI :
10.1109/CICC.2007.4405781
Filename :
4405781
Link To Document :
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