Title :
Study of DC sputtered Cu2O growth and p-Cu2O/ n-IGZO heterojunctions
Author :
Ji-Yu Feng ; Chun-Feng Hu ; Xin-Ping Qu
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
Cu2O thin films were deposited on glass substrates by DC magnetron sputtering. The effects of the ratio of Ar/O2 and sputtering pressure on the structure of the formed copper oxide films were investigated. It is found that with increase of O2 ratio and sputtering pressure, the formed films change from a mixture of Cu and Cu2O to pure CuO film. It is also found that the film has a preferred Cu2O (200) orientation and cluster surface morphology. The fabricated p-Cu2O/n-IGZO heterojunction has a rectifying I-V characteristic and exhibits a response to UV illumination.
Keywords :
copper compounds; gallium compounds; indium compounds; p-n heterojunctions; rectification; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; surface morphology; zinc compounds; Cu2O-InGaZnO; DC magnetron sputtering; SiO2; UV illumination; air-oxygen ratio effect; cluster surface morphology; copper oxide film structure; glass substrates; p-n heterojunctions; pure CuO film; rectifying I-V characteristic; sputtering pressure effect; thin films; Abstracts; Magnetic films; Sputtering; Zinc oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021183
