Title :
Investigation of the adhesion properties between COxMOy alloys and porous low-k
Author :
Li-Ao Cao ; Hui Feng ; Xu Wang ; Xin-Ping Qu
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
In this work, the adhesion properties between different metal films, including Co, Mo, and novel single layer barrier - CoMo alloys with porous low-k dielectrics (k=2.3) have been investigated by using Four-point bending (FPB) tests for the first time. The results show that, Mo has the highest adhesion energy with porous low-k, while Co has the lowest among the test material including reference Ta/TaN. The adhesion ability between CoxMoy films and low-k dielectrics is increased as the Mo concentration increases.
Keywords :
adhesion; bending; copper alloys; low-k dielectric thin films; porous materials; CoxMoy; CoMo alloys; CoxMoy films; FPB; adhesion energy; adhesion properties; four-point bending; metal films; porous low-k dielectrics; single layer barrier; Abstracts; Dielectrics;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021186