Title :
Low dielectric constant films deposited by PECVD using tetraethoxysilane and limonene as precursors
Author :
Zai-Shang Tan ; Shi-Jin Ding ; Zhong-yong Fan ; Wei Zhang
Author_Institution :
Dept. of Mater. Sci., Fudan Univ., Shanghai, China
Abstract :
Low-k films were prepared using tetraethoxysilane (TEOS) and limonene (LIMO) as precursors by PECVD and post-deposition annealing, where limonene was used as the source of porogen. The incorporation and removal of porogen caused great changes in the structure and properties of films. The effects of RF power and LIMO/TEOS flow rate ratio on the properties of the prepared films were studied. Under the current experimental conditions, the porous SiOCH film with a k value as low as 2.6 was achieved, together with an extremely low leakage current density of 6.03×10-9 A/cm2 at 1 MV/cm, as well as good mechanical properties.
Keywords :
Young´s modulus; annealing; current density; dielectric thin films; leakage currents; oxygen compounds; permittivity; plasma CVD; silicon compounds; LIMO-TEOS flow rate ratio; PECVD; RF power; SiOCH; leakage current density; limonene; low dielectric constant films; low-k films; mechanical properties; porogen; porous film; post-deposition annealing; tetraethoxysilane; Abstracts; Annealing; Films; Mechanical factors; Radio frequency;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021187
