Title :
Effect of glycine on CMP process of molybdenum
Author :
Hui Feng ; Li-Ao Cao ; Xin-Ping Qu
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
The effect of glycine on CMP of Mo using H2O2 based alkaline slurry is investigated. It is found that both removal rate (RR) and static etch rate(SER)decrease after adding glycine into the alkaline slurry. Higher concentration of glycine results in a lower RR. The in-situ OCP experiment results reveal that after adding glycine into the slurry, the chemical reaction becomes weaker and less amount of oxide forms. The mechanism of glycine´s inhibition to CMP of Mo is due to physical adsorption between the glycine molecule and the Mo surface.
Keywords :
chemical mechanical polishing; chemical reactions; molybdenum; organic compounds; slurries; CMP process; H2O2; Mo; alkaline slurry; chemical reaction; glycine inhibition; glycine molecule; molybdenum; physical adsorption; removal rate; static etch rate; Abstracts;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021189
