Title :
A novel RF switch device using InGaAs MOSFET technology
Author :
Jiahui Zhou ; Hudong Chang ; Xufang Zhang ; Jingzhi Yang ; Zhenhua Zeng ; Xu Yang ; Honggang Liu ; Simin Li ; Qi Li ; Wenjun Xu ; Haiou Li
Author_Institution :
Guangxi Exp. Center of Inf. Sci., Guilin Univ. of Electron. Technol., Guilin, China
Abstract :
In this paper, a novel InGaAs metal oxide semiconductor field effect transistor (MOSFET) radio frequency (RF) switch device is demonstrated. The MOSFET RF switch device with 0.3 μm gate length and 10 nm Al2O3 as gate dielectric shows insertion loss of 0.3 dB and isolation of more than 50 dB. A maximum drain current of 250 mA/mm, a peak transconductance of 370 mS/mm, a turn-on resistance of 2.4 O·mm and a drain current on-off (Ion/Ioff) ratio of over 1×106 are obtained. The small signal models of this MOSFET switch device are also described. Excellent agreement between measured and simulated demonstrates the validity of this model.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor switches; indium compounds; microswitches; microwave switches; radiofrequency integrated circuits; Al2O3; InGaAs; MOSFET RF switch device; MOSFET technology; drain current; gate dielectric; insertion loss; metal oxide semiconductor field effect transistor; radio frequency switch device; signal models; size 0.3 mum; size 10 nm; Insertion loss; Logic gates; Loss measurement; MOSFET; Radio frequency; Switches; Transconductance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021191
