A 500MHz Low Phase-Noise A1N-on-Silicon Reference Oscillator

Author

Lavasani, Hossein Miri ; Abdolvand, Reza ; Ayazi, Farrokh

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

16-19 Sept. 2007

Firstpage

599

Lastpage

602

Abstract

This paper presents a 496 MHz low phase-noise reference oscillator using a high-Q lateral-mode AlN-on-Si micromechanical resonator that does not require DC voltage for operation. The sustaining amplifier consists of an inductorless high-gain CMOS transimpedance amplifier (TIA) that is optimized for low phase-noise. The resonator is designed to have a high quality factor in air (Q-3800) with low motional impedance. The measured phase-noise at 1 kHz offset is -92 dBc/Hz with phase-noise floor below -147 dBc/Hz (exceeding GSM phase-noise requirement by 2 dB and 28 dB, respectively).

Keywords

CMOS integrated circuits; UHF amplifiers; UHF oscillators; aluminium compounds; micromechanical resonators; silicon; AlN; AlN-on-silicon; Si; frequency 496 MHz; frequency 500 MHz; high-Q lateral-mode; high-gain CMOS transimpedance amplifier; low motional impedance; low phase-noise reference oscillator; micromechanical resonator; Fabrication; Impedance; Micromechanical devices; Oscillators; Phase measurement; Q factor; Resonance; Resonant frequency; Silicon; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2007. CICC '07. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-1623-3

Electronic_ISBN

978-1-4244-1623-3

Type

conf

DOI

10.1109/CICC.2007.4405803

Filename

4405803