Latest advances in gallium nitride HEMT modeling

GaN-based high electron mobility transistor (HEMT) has been considered as the next-generation technology for high-frequency/high-power and high-speed/high-voltage applications. This paper discusses the needs and challenges for advanced GaN HEMT models, and reviews latest advances by focusing on Compact Model Coalition´s (CMC) newly launched effort on GaN HEMT model standardization and DynaFET, a unique characterization and modeling methodology that uses large-signal waveform measurement as a central input. Distinct technical approaches in DynaFET and CMC´s candidate models (the Angelov-GaN model, the COMON model, the HSP model, and the MVSG-HV model) are highlighted.