Design of a silicon carbide CMOS power OPAMP for stable operation at elevated temperatures

Author

Chen, Jian-Song ; Kornegay, Kevin T.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

1

fYear

1997

fDate

9-12 Jun 1997

Firstpage

157

Abstract

A class AB silicon carbide CMOS power operational amplifier with stable open-loop voltage gain over a wide temperature range is presented. A bias circuit is provided to make the voltage gain of the operational amplifier insensitive to threshold voltage and mobility variations. A class AB output stage combined with a novel adaptive biasing scheme is developed to produce a full-rail-to-rail output swing and a low output resistance. A nested Miller compensated topology is also incorporated to provide a phase margin of 68°. The DC gain of the operational amplifier only experiences a 0.51 dB variation over a temperature range of 25°C to 300°C and a 7.22 dB variation from V_DD=32 V to V_DD=100 V. This operational amplifier is ideal for use as a voltage buffer or power amplifier intended for high temperature operation

Keywords

CMOS analogue integrated circuits; high-temperature techniques; operational amplifiers; power amplifiers; semiconductor materials; silicon compounds; 25 to 300 C; 32 to 100 V; SiC; adaptive bias circuit; class AB silicon carbide CMOS power operational amplifier; high temperature operation; nested Miller compensation; open-loop voltage gain; voltage buffer; Circuit analysis; High power amplifiers; Operational amplifiers; Silicon carbide; Temperature dependence; Temperature distribution; Temperature sensors; Thermal conductivity; Threshold voltage; Virtual reality;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on

Print_ISBN

0-7803-3583-X

Type

conf

DOI

10.1109/ISCAS.1997.608646

Filename

608646