Title :
Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology
Author :
Shixiong Liang ; Yulong Fang ; Dong Xing ; Junlong Wang ; Lisen Zhang ; Dabao Yang ; Xiongwen Zhang ; Zhihong Feng
Author_Institution :
Nat. Key Lab. of Applic.-Specific Integrated Circuit (ASIC), Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
GaN-based planar schottky barrier diodes with potential applications in high frequency multipliers were designed, fabricated and characterized. The parasitic parameters of diodes were reduced by the air-birdge technology and ultrathin substrate. The total capacitance of diodes was only 12.5fF, and the series resistance is 16Ω. The Diodes with a thickness of 50μm and an anode diameter of 5μm had a hard breakdown voltage of 22.8V, the turn-on voltage of 0.45V@10μA and a cut-off frequency (fc) of 796GHz.
Keywords :
III-V semiconductors; Schottky diodes; electric breakdown; frequency multipliers; gallium compounds; submillimetre wave diodes; wide band gap semiconductors; GaN; GaN-based diodes; air-bridge technology; capacitance 12.5 fF; current 10 muA; frequency 796 GHz; hard breakdown voltage; high frequency diodes; high frequency multipliers; parasitic parameters; planar Schottky barrier diodes; resistance 16 ohm; series resistance; size 5 mum; size 50 mum; ultrathin substrate; voltage 0.45 V; voltage 22.8 V; Abstracts; Conductivity; Current measurement; Gallium nitride; Gold; Schottky barriers; Schottky diodes;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021212
