Title :
Defect engineering via surfaces for metal-oxide electronics
Author :
Seebauer, Edmund G.
Author_Institution :
Dept. of Chem. & Biomol. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
Recent advances are presented relating to methods for engineering the behavior of point defects in oxide semiconductors like rutile TiO2 and ZnO. Self-diffusion experiments, supported by continuum computations, show that surfaces exert profound effects on defects within the bulk through two distinct mechanisms involving surface chemical bond exchange and electrostatics. Such effects are especially pronounced in confined geometries such as thin films, small particles and nanowires with high surface/volume ratios.
Keywords :
point defects; self-diffusion; surface treatment; TiO2; ZnO; continuum computations; defect engineering; metal oxide electronics; oxide semiconductors; point defects; self-diffusion experiments; surface defect; Abstracts; Heating;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021214
