Title :
A comparison of donor mapping techniques using the scanning helium ion microscope and scanning electron microscope
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Nottingham, Ningbo, China
Abstract :
Compared to scanning electron microscope (SEM) dopant contrast where energy filtering is required, this paper reports for the first time strong contrast from donor distributions using the scanning helium ion microscope (SHIM) that can be used to map n-type regions at high resolution without the need for energy filtering. The sensitivity limit is about 1017 donors cm-3 if there were no p-type regions. Quantification problems are discussed and suggestions are given including improvements in detector design and lower beam voltage operation for the SHIM as a tool for high spatial resolution dopant characterisation.
Keywords :
ion microscopes; scanning electron microscopes; detector design; donor distributions; donor mapping techniques; energy filtering; high-spatial resolution dopant characterisation; low-beam voltage operation; n-type regions; p-type regions; scanning electron microscope; scanning helium ion microscope; Detectors; Doping; Filtering; Image resolution; Scanning electron microscopy; Sensitivity; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021215