Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

Author

Xixiang Feng ; Pengpeng Ren ; Zhigang Ji ; Runsheng Wang ; Sutaria, Ketul B. ; Yu Cao ; Ru Huang

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

Keywords

hot carriers; minority carriers; reaction-diffusion systems; CVS method; VSS technique; constant voltage stress method; device degradation mechanisms; fast lifetime prediction; hot carrier degradation; hot carrier injection; reaction-diffusion model; voltage step stress technique; wafer-level reliability qualification methodology; Abstracts; Degradation; Educational institutions; Performance evaluation; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021226

Filename

7021226