Title :
Ti/Al/Au ohmic contacts to p-type 4H-SiC
Author :
Chao Han ; YuMing Zhang ; Qingwen Song ; Yimen Zhang ; Xiaoyan Tang ; Hui Guo
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
Ti/Al/Au ohmic contacts to p-type 4H-SiC with different Ti composition are reported. The contact with high Ti content yields a lower specific contact resistivity (ρC) of 6.4×10-5Ωcm2, compared with the low-Ti contained contact. The annealed surface morphology and phase products for these contacts are examined by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD) spectra, respectively. These results reveal that rich Ti prevents the large agglomerate grains from the liquid Al during annealing, which is beneficial for interfacial reaction and formation of the ohmic contact.
Keywords :
X-ray diffraction; aluminium; annealing; contact resistance; gold; ohmic contacts; scanning electron microscopy; silicon compounds; titanium; wide band gap semiconductors; SEM; SiC; Ti composition; Ti-Al-Au; X-ray diffraction spectra; XRD spectra; annealed surface morphology; interfacial formation; interfacial reaction; ohmic contacts; p-type 4H-SiC; scanning electron microscope; specific contact resistivity; Abstracts; Annealing; Artificial intelligence; Atmospheric measurements; Educational institutions; Electric variables measurement; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021229
