Title :
3D RRAM: Design and optimization
Author :
Jinfeng Kang ; Bin Gao ; Chen, Bing ; Huang, Pei-Yu ; Zhang, F.F. ; Deng, Y.X. ; Liu, L.F. ; Liu, X.Y. ; Chen, H.-Y. ; Jiang, Z. ; Yu, S.M. ; Wong, H.-S Philip
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A novel vertical RRAM for 3D cross-point architecture is proposed. The design and optimization issues of the proposed vertical RRAM for 3D cross-point architecture array are addressed from both device and array levels. A double layer stacked HfOx based vertical RRAM devices with interface engineering fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The opimized design guidances for the 3D cross-point architecture array are presented.
Keywords :
circuit optimisation; hafnium compounds; high-k dielectric thin films; integrated circuit design; random-access storage; three-dimensional integrated circuits; 3D RRAM; 3D cross-point architecture array; HfOx; cost-effective fabrication; double layer stacked HfOx based vertical RRAM devices; interface engineering; metal oxide based resistive switching random access memory; opimized design guidances; vertical RRAM; Abstracts; Arrays; Microprocessors; Performance evaluation; Switches; Three-dimensional displays;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021234
