A comprehensive speed-power analysis of resistive switching memory arrays with selection devices

In this work, a comprehensive analysis is performed to study the speed-power performance of one selector-one resistor (1S-1R) and one transistor-one resistor (1T-1R) resistive random access memory (RRAM) arrays, using a physics-based SPICE model of RRAM. It is found that for 1S-1R applications, high turn-on voltage and low conductivity of selectors are beneficial for power reduction, while low turn-on voltage and high conductivity are required for high-speed applications. High nonlinearity of selectors is critical for both low-power and high-speed 1S-1R applications. For 1T-1R arrays, interconnect RC components will impact energy consumption and RC delay, which may set a major limitation to high-speed low-power RRAM applications.