Title :
A 60 GHz Power Amplifier in 90nm CMOS Technology
Author :
Heydari, Babak ; Bohsali, Mounir ; Adabi, Ehsan ; Niknejad, Ali M.
Author_Institution :
Univ. of California at Berkeley, Berkeley
Abstract :
A two-stage 60 GHz 90 nm CMOS PA has been designed and fabricated. The amplifier has a measured power gain of 9.8 dB. The input is gain matched while the output is matched to maximize the output power. The measured P-1dB = 6.7 dBm with a corresponding power added efficiency of 20%. This amplifier can be used as a pre-driver or as the main PA for short range wireless communication. The output power can be boosted with on-chip or spatial power combining.
Keywords :
CMOS analogue integrated circuits; millimetre wave power amplifiers; power combiners; CMOS PA; CMOS technology; frequency 60 GHz; gain 9.8 dB; on-chip power combining; power added efficiency; power amplifier; size 90 nm; spatial power combining; CMOS technology; Fingers; Frequency; Impedance matching; Power amplifiers; Power combiners; Power generation; Power measurement; Transmitters; Wireless communication;
Conference_Titel :
Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-1623-3
Electronic_ISBN :
978-1-4244-1623-3
DOI :
10.1109/CICC.2007.4405843
