Title :
10 years of transistor innovations in System-on-Chip (SoC) era
Author_Institution :
Technol. Manuf. Group, Intel Corp., Hillsboro, OR, USA
Abstract :
In the last decade, System-on-Chip (SoC) products, including smart phones, tablets, netbooks, embedded systems, wireless communications, and ASIC products, have emerged as the rising stars in the mobile and embedded IC markets. Concurrently, the main stream silicon process technology has undergone radical overhauls since the old dimensional scaling is running out of steam. Innovative transistor architectures based upon new materials and structures, such as strained silicon at 90 nm, high-k/metal gate at 45 nm, and recently 3-D Tri-Gate at 22 nm, have been developed and ramped into high volume manufacturing to continue Moore´s Law scaling. This paper examines how these advanced transistor architectures can be exploited to meet and exceed the technical requirements of new SoC products.
Keywords :
elemental semiconductors; embedded systems; integrated circuit design; silicon; system-on-chip; transistor circuits; 3D trigate; ASIC products; Moore´s law; Si; SoC products; embedded IC markets; embedded systems; high-k-metal gate; netbooks; silicon process technology; size 22 nm; size 45 nm; size 90 nm; smart phones; system-on-chip; tablets; time 10 year; transistor architectures; transistor innovations; wireless communications; Abstracts; Baseband; High K dielectric materials; Logic gates; Metals; Random access memory; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021244