Title :
FDSOI applications and opportunity in China
Author :
Zhongli Liu ; Kai Zhao
Author_Institution :
Inst. of Semicond., Beijing, China
Abstract :
Most of the electronic products are faced with a problem of energy conservation. The mobile electronic products and space applications in particular require ICs with low voltage and low power. The development for bulk Si even PDSOI CMOS in these aspects encounters a great challenge. FDSOI namely full depletion silicon on insulator is a very good alternative. When devices further scale down to the nanometer level, the advantage of energy saving of FDSOI is more prominent. This paper introduces advantages and applications of FDSOI as well as its development opportunity in China.
Keywords :
CMOS integrated circuits; electronic products; energy conservation; silicon-on-insulator; China; FDSOI application; IC; PDSOI CMOS; Si; complementary metal oxide semiconductor; energy conservation; full depletion silicon-on-insulator; integrated circuit; mobile electronic product; nanometer level; partially depleted silicon-on-insulator; space application; Abstracts; Field programmable gate arrays; Ions; Junctions; Logic gates; Random access memory; Reliability;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021247
