Title :
2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602)
Keywords :
III-V semiconductors; gallium arsenide; reliability; GaAs; GaAs reliability; HBT; defects; field-accelerated testing; temperature-accelerated testing;
Conference_Titel :
GaAs Reliability Workshop, 2001. Proceedings
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7908-0066-7
DOI :
10.1109/GAASRW.2001.995722
