Accurate Modeling of RF Circuit Blocks: Weakly-Nonlinear Narrowband LNAs

Author

Croon, J.A. ; Leenaerts, D.M.W. ; Klaassen, D.B.M.

Author_Institution

NXP Semicond. Res., Eindhoven

fYear

2007

fDate

16-19 Sept. 2007

Firstpage

865

Lastpage

868

Abstract

An extensive behavioral model is presented for weakly-nonlinear narrowband LNAs. Both the electrical transfer and noise properties are well described. Performance figures can be predicted for varying source and load conditions. A Verilog-A implementation facilitates cross-platform simulations. The model is compared to transistor-level simulations of a simple textbook LNA and of a state-of-the-art 65 nm CMOS LNA in combination with a mixer. Excellent agreements are achieved.

Keywords

CMOS analogue integrated circuits; circuit noise; circuit simulation; hardware description languages; low noise amplifiers; mixers (circuits); radiofrequency amplifiers; CMOS LNA; RF circuit blocks; Verilog-A implementation; cross-platform simulations; electrical transfer properties; extensive behavioral model; mixer; noise properties; size 65 nm; weakly-nonlinear narrowband LNA; Circuit simulation; Energy consumption; Hardware design languages; Impedance; Narrowband; Power system modeling; Radio frequency; Semiconductor device modeling; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2007. CICC '07. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-1623-3

Electronic_ISBN

978-1-4244-1623-3

Type

conf

DOI

10.1109/CICC.2007.4405865

Filename

4405865