DocumentCode
2416812
Title
Effect of gate metal on reliability of metamorphic HEMTs
Author
Dammann, M. ; Leuther, A. ; Konstanzer, H. ; Jantz, W.
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fYear
2001
fDate
2001
Firstpage
87
Lastpage
88
Abstract
The influence of the gate metal on the reliability of metamorphic InAlAs/InGaAs HEMTs with a gate length of 0.12 μm was studied by biased accelerated life tests in air and in nitrogen. By replacing the Ti-Pt-Au gate by Pt-Ti-Pt-Au we found that the life time at 220°C can be increased at least by a factor of two. An activation energy of 1.5 eV and a life time of 1.1×106 h at 125°C in air were derived for MHEMTs with Pt-Ti-Pt-Au gate.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device reliability; 0.12 micron; 125 C; 220 C; InAlAs-InGaAs; InAlAs/InGaAs metamorphic HEMT; Pt-Ti-Pt-Au; Ti-Pt-Au; accelerated life testing; activation energy; gate metal; lifetime; reliability; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Life estimation; Life testing; MODFETs; Nitrogen; Threshold voltage; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 2001. Proceedings
Print_ISBN
0-7908-0066-7
Type
conf
DOI
10.1109/GAASRW.2001.995734
Filename
995734
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