DocumentCode :
2416889
Title :
Reliability of metamorphic HEMTs on GaAs substrates
Author :
Marsh, P.F. ; Whelan, C.S. ; Hoke, W.E. ; Leoni, R.E., III ; Kazior, T.E.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
fYear :
2001
fDate :
2001
Firstpage :
119
Lastpage :
132
Abstract :
Metamorphic HEMT (MHEMT) technology enables the growth of high indiurn content channels on GaAs substrates, giving them the performance of InP HEMTs. MHEMT growth techniques use a graded alloy composition layer structure, permitting channel In contents exceeding 25% without strain. Potential applications include 40 Gb/sec fiber as well as LNAs for LMDS and satellite communication. Many such applications place stringent requirements on reliability with Belcore standards requiring 106 hrs Mean Time to Failure (MTTF) at 125C for power devices. Satellite applications require a LNA projected failure-free service of 15-30 years at 80C, which implies an 80C MTTF of approximately 107 hours. Naturally, one will ask "Is MHEMT technology reliable?" From the results of our ongoing work, we show MHEMT reliability to be similar to InP HEMTs\´ with ∼106 hours MTTF at 125C.
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; high electron mobility transistors; semiconductor device reliability; 125 C; GaAs; GaAs substrate; mean time to failure; metamorphic HEMT; reliability; Degradation; Gallium arsenide; Gold; HEMTs; Indium phosphide; MODFETs; Materials reliability; Ohmic contacts; Radio frequency; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs Reliability Workshop, 2001. Proceedings
Print_ISBN :
0-7908-0066-7
Type :
conf
DOI :
10.1109/GAASRW.2001.995739
Filename :
995739
Link To Document :
بازگشت