Title :
Towards CMOS-compatible photon-counting imagers in the whole 10 nm – 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology
Author :
Nanver, Lis K. ; Qi, Lin ; Sammak, A. ; Mok, K.R.C. ; Aminian, M. ; Charbon, E.
Author_Institution :
Dept. of Microelectron., Delft Univ. of Technol., Delft, Netherlands
Abstract :
The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm - 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 μm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).
Keywords :
CMOS integrated circuits; Ge-Si alloys; avalanche photodiodes; elemental semiconductors; gallium compounds; photon counting; silicon; CMOS -compatible photon-counting imagers; GaB; NIR; PureGaB Ge-on-Si photodiodes; SPAD; Si; near infrared; pureB Si photodiodes; single-photon avalanche diodes; wavelength 10 nm to 1600 nm; CMOS integrated circuits; Junctions; Photodiodes; Photonics; Silicon; Temperature; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021268
