• DocumentCode
    241690
  • Title

    Towards CMOS-compatible photon-counting imagers in the whole 10 nm – 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology

  • Author

    Nanver, Lis K. ; Qi, Lin ; Sammak, A. ; Mok, K.R.C. ; Aminian, M. ; Charbon, E.

  • Author_Institution
    Dept. of Microelectron., Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm - 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 μm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; avalanche photodiodes; elemental semiconductors; gallium compounds; photon counting; silicon; CMOS -compatible photon-counting imagers; GaB; NIR; PureGaB Ge-on-Si photodiodes; SPAD; Si; near infrared; pureB Si photodiodes; single-photon avalanche diodes; wavelength 10 nm to 1600 nm; CMOS integrated circuits; Junctions; Photodiodes; Photonics; Silicon; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021268
  • Filename
    7021268
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241690