Characteristics of double-gate a-IGZO TFT

Author

Xin He ; Xiang Xiao ; Wei Deng ; Longyan Wang ; Ling Wang ; Shipeng Chi ; Yang Shao ; Mansun Chan ; Shengdong Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

A double-gate (DG) a-IGZO TFT with separate bottom-gate and top-gate is fabricated and electrically characterized. It is shown that the double-gate device has a steeper sub-threshold swing, a larger carrier mobility, and a driving current 2.4 times larger than the conventional single-gate device. Due to the lowered vertical electric field across the channel region, a negligible V_th shift is observed for the double-gate device under negative gate bias stress. Moreover, the dynamic threshold voltage effect has also been demonstrated due to the separate two gates in the TFT.

Keywords

carrier mobility; gallium compounds; indium compounds; thin film transistors; DG; InGaZnO; bottom-gate device; carrier mobility; double-gate TFT device; dynamic threshold voltage effect; negative gate bias stress; single-gate device; subthreshold swing; thin film transistor; top-gate device; vertical electric field; Abstracts; Glass; Performance evaluation; Welding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021269

Filename

7021269