Title :
Pixel design optimization of CMOS image sensor with large dynamic range and high charge transfer efficiency
Author :
Yong-Xia Bao ; Yu-Long Jiang
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
The pixel design of CMOS image sensor with large dynamic range of 71dB and high charge transfer efficiency by simulation is presented. The electron transfer efficiency of 100% can be obtained, which means all the electrons induced by illumination can be transferred to the floating drain. The influence of gate length and photodiode location on charge transfer efficiency and dynamic range is investigated in this paper.
Keywords :
CMOS image sensors; CMOS image sensor; high charge transfer efficiency image sensor; large dynamic range image sensor; pixel design optimization; Abstracts; CMOS image sensors; CMOS integrated circuits; CMOS technology; Charge transfer; Dynamic range; Logic gates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021273
