Title :
Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentration
Author :
Fresina, Mike ; Logue, Mike ; Fendrich, John ; Rogers, Tom
Author_Institution :
RF Micro Devices, Greensboro, NC, USA
Abstract :
The reliability of MBE-grown AlGaAs/GaAs HBT technology has been well documented and the process has consistently demonstrated MTTF(125) > 1E8 hours and EA ≈1.7 eV. We have now released our next generation HBT technology (HBT-3G). Several changes were made to the original production HBT structure (HBT2UM) to improve the HBT performance for HBT-3G. Most significant of these changes were an increase in the Be concentration in the base by 50% and an increase in the aluminum concentration in the emitter from 26% to 33%. Three-temperature accelerated life testing has been completed on this new device structure and shows the HBT-3G device to be as reliable as the HBT2UM technology.
Keywords :
III-V semiconductors; aluminium compounds; beryllium; failure analysis; gallium arsenide; heterojunction bipolar transistors; life testing; molecular beam epitaxial growth; semiconductor device reliability; semiconductor doping; AlGaAs-GaAs:Be; AlGaAs/GaAs HBT; HBT-3G device; HBT2UM technology; MBE growth; MTTF; activation energy; aluminum concentration; beryllium doping; reliability; three-temperature accelerated life testing; Aluminum; Doping; Gallium arsenide; Heterojunction bipolar transistors; Life estimation; Life testing; Power amplifiers; Production; Radio frequency; Temperature;
Conference_Titel :
GaAs Reliability Workshop, 2001. Proceedings
Print_ISBN :
0-7908-0066-7
DOI :
10.1109/GAASRW.2001.995748
